STMicroelectronics STP Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 STP80N900K6

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Subtotal (1 tube of 50 units)*

Kr.558 60 

(exc. VAT)

Kr.698 25 

(inc. VAT)

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Units
Per unit
Per Tube*
50 +Kr. 11,172Kr. 558,60

*price indicative

RS Stock No.:
285-5914
Mfr. Part No.:
STP80N900K6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

68W

Maximum Operating Temperature

150°C

Width

10.4 mm

Standards/Approvals

RoHS

Length

28.9mm

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

Worldwide best RDS(on) x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

100% avalanche tested

Zener-protected

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