Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1
- RS Stock No.:
- 215-2482
- Mfr. Part No.:
- IPA65R125C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.252 40
(exc. VAT)
Kr.315 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 345 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 50,48 | Kr. 252,40 |
| 10 - 20 | Kr. 45,44 | Kr. 227,20 |
| 25 - 45 | Kr. 42,396 | Kr. 211,98 |
| 50 - 120 | Kr. 39,354 | Kr. 196,77 |
| 125 + | Kr. 36,86 | Kr. 184,30 |
*price indicative
- RS Stock No.:
- 215-2482
- Mfr. Part No.:
- IPA65R125C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 32W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 32W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
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