Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.787 44 

(exc. VAT)

Kr.984 30 

(inc. VAT)

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  • Plus 240 unit(s) shipping from 19. januar 2026
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Units
Per unit
Per Tube*
30 +Kr. 26,248Kr. 787,44

*price indicative

RS Stock No.:
214-9118
Mfr. Part No.:
IPW65R125C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS C7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

101W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Standards/Approvals

No

Length

16.13mm

Width

5.21 mm

Height

21.1mm

Automotive Standard

No

The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Easy to use/drive

Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

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