Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 214-9116
- Mfr. Part No.:
- IPW60R180C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.596 97
(exc. VAT)
Kr.746 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 180 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 19,899 | Kr. 596,97 |
| 60 - 120 | Kr. 18,905 | Kr. 567,15 |
| 150 - 270 | Kr. 18,109 | Kr. 543,27 |
| 300 - 570 | Kr. 17,312 | Kr. 519,36 |
| 600 + | Kr. 16,12 | Kr. 483,60 |
*price indicative
- RS Stock No.:
- 214-9116
- Mfr. Part No.:
- IPW60R180C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching functions. Suitable for applications such as server, telecom and solar.
Suitable for hard and soft switching
Qualified for industrial grade applications according to JEDEC
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247