Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.153 06
(exc. VAT)
Kr.191 325
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 370 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 30,612 | Kr. 153,06 |
| 25 - 45 | Kr. 23,268 | Kr. 116,34 |
| 50 - 120 | Kr. 21,736 | Kr. 108,68 |
| 125 - 245 | Kr. 20,204 | Kr. 101,02 |
| 250 + | Kr. 18,67 | Kr. 93,35 |
*price indicative
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching. Suitable for applications such as server, telecom and solar.
Qualified for industrial grade applications according to JEDEC
Suitable for hard and soft switching
Related links
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R180C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R180C7ATMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R180C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R180C7ATMA1
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220 STP18NM60N
- Vishay Silicon N-Channel MOSFET 600 V, 3-Pin TO-220 SIHF085N60EF-GE3
- STMicroelectronics MDmesh 13 A 3-Pin TO-220 STP13NK60Z
- Infineon CoolMOS™ C7 N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R190C7FKSA1