STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.22 417 50 

(exc. VAT)

Kr.28 022 50 

(inc. VAT)

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Units
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Per Reel*
2500 +Kr. 8,967Kr. 22 417,50

*price indicative

RS Stock No.:
188-8289
Mfr. Part No.:
STD5N80K5
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.73Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

60W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.17mm

Standards/Approvals

No

Length

6.6mm

Automotive Standard

No

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

Zener-protected

Applications

Switching applications

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