STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263 STB12NM50T4

View all MOSFETs

Subtotal (1 pack of 5 units)*

Kr.303 39 

(exc. VAT)

Kr.379 24 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 975 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 +Kr. 60,678Kr. 303,39

*price indicative

Packaging Options:
RS Stock No.:
188-8473
Mfr. Part No.:
STB12NM50T4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

500V

Series

STP12NM50

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

160W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.4mm

Height

4.37mm

Width

9.35 mm

Automotive Standard

No

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.

High dv/dt and avalanche capabilities

Low input capacitance and gate charge

Tight process control and high manufacturing yields

Low gate input resistance

Applications

Switching application

Related links