STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263

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Subtotal 20 units (supplied on a continuous strip)*

Kr. 1 974,50

(exc. VAT)

Kr. 2 468,12

(inc. VAT)

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Units
Per unit
20 - 48Kr. 98,725
50 +Kr. 93,58

*price indicative

Packaging Options:
RS Stock No.:
188-8512P
Mfr. Part No.:
STB43N65M5
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

630mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.37mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

AEC-Q101

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

Extremely low RDS(on)

Low gate charge and input capacitance

Excellent switching performance

Applications

Switching applications

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