STMicroelectronics Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal 25 units (supplied on a continuous strip)*

Kr. 967,25

(exc. VAT)

Kr. 1 209,00

(inc. VAT)

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Units
Per unit
25 - 45Kr. 38,69
50 - 120Kr. 36,63
125 - 245Kr. 34,594
250 +Kr. 32,992

*price indicative

Packaging Options:
RS Stock No.:
188-8527P
Mfr. Part No.:
STB80NF55-06T4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

142nC

Maximum Operating Temperature

175°C

Length

10.4mm

Width

9.35 mm

Height

4.37mm

Standards/Approvals

No

Automotive Standard

No

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Exceptional dv/dt capability

Application oriented characterization

Applications

Switching application

Applications

Switching application