SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK Wolfspeed C3M0075120J
- RS Stock No.:
- 192-3373
- Mfr. Part No.:
- C3M0075120J
- Brand:
- Wolfspeed
50 In stock for same day dispatch
Price Each (In a Tube of 50)
Kr. 164,188
(exc. VAT)
Kr. 205,235
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 + | Kr. 164,188 | Kr. 8 209,40 |
| *price indicative | ||
- RS Stock No.:
- 192-3373
- Mfr. Part No.:
- C3M0075120J
- Brand:
- Wolfspeed
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-263-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Width | 9.12mm |
| Length | 10.23mm |
| Typical Gate Charge @ Vgs | 48 nC @ 4/15V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |
- RS Stock No.:
- 192-3373
- Mfr. Part No.:
- C3M0075120J
- Brand:
- Wolfspeed
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-263-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Width | 9.12mm |
| Length | 10.23mm |
| Typical Gate Charge @ Vgs | 48 nC @ 4/15V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |