SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

RS Stock No.:: 192-3378
Mfr. Part No.:: C3M0120090J
Brand:: Wolfspeed

SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

600 In stock for same day dispatch

Added

Price Each (In a Tube of 50)

Kr. 105,292

(exc. VAT)

Kr. 131,615

(inc. VAT)

Units	Per unit	Per Tube*
50 +	Kr. 105,292	Kr. 5 264,60
*price indicative

RS Stock No.:: 192-3378
Mfr. Part No.:: C3M0120090J
Brand:: Wolfspeed

Technical Reference

Legislation and Compliance

COO (Country of Origin):: US

Product Details

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	900 V
Package Type	TO-263-7
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	120 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, 18 V
Number of Elements per Chip	1
Transistor Material	SiC
Length	10.23mm
Width	9.12mm
Typical Gate Charge @ Vgs	17.3 nC @ 4/15V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	4.57mm

RS Stock No.:: 192-3378
Mfr. Part No.:: C3M0120090J
Brand:: Wolfspeed