STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.15 134 00 

(exc. VAT)

Kr.18 918 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 15,134Kr. 15 134,00

*price indicative

RS Stock No.:
192-4649
Mfr. Part No.:
STB18N60M6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.4mm

Width

9.35 mm

Height

4.37mm

Automotive Standard

No

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

Zener-protected

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