STMicroelectronics STB N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- RS Stock No.:
- 214-851
- Mfr. Part No.:
- STB45N60DM6
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
Kr. 76,30
(exc. VAT)
Kr. 95,38
(inc. VAT)
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- 989 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | Kr. 76,30 |
*price indicative
- RS Stock No.:
- 214-851
- Mfr. Part No.:
- STB45N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 210W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Width | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 210W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.85mm | ||
Height 4.6mm | ||
Width 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Extremely high dv/dt ruggedness
Zener protected
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