Infineon HEXFET Type N-Channel MOSFET & Diode, 73 A, 100 V Enhancement, 2-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.11 372 00 

(exc. VAT)

Kr.14 215 20 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 14,215Kr. 11 372,00
1600 +Kr. 13,504Kr. 10 803,20

*price indicative

RS Stock No.:
220-7497
Mfr. Part No.:
IRFS4610TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

73A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

140nC

Maximum Power Dissipation Pd

190W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Height

9.65mm

Width

4.83 mm

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

High-current rating

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High current carrying capability

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