Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247 AUIRFP4110

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Subtotal (1 pack of 2 units)*

Kr.133 74 

(exc. VAT)

Kr.167 18 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 66,87Kr. 133,74
10 - 18Kr. 59,49Kr. 118,98
20 - 48Kr. 55,485Kr. 110,97
50 - 98Kr. 51,48Kr. 102,96
100 +Kr. 48,16Kr. 96,32

*price indicative

Packaging Options:
RS Stock No.:
220-7345
Mfr. Part No.:
AUIRFP4110
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

175°C

Height

5.31mm

Width

20.7 mm

Length

15.87mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

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