Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 25 units)*

Kr.1 110 70 

(exc. VAT)

Kr.1 388 375 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 275 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
25 - 25Kr. 44,428Kr. 1 110,70
50 - 100Kr. 42,209Kr. 1 055,23
125 +Kr. 40,429Kr. 1 010,73

*price indicative

RS Stock No.:
220-7344
Mfr. Part No.:
AUIRFP4110
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

370W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

20.7 mm

Standards/Approvals

No

Height

5.31mm

Length

15.87mm

Automotive Standard

AEC-Q101

The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Related links