Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 2 units)*
Kr.99 99
(exc. VAT)
Kr.124 988
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- 20 left, ready to ship
- Final 196 unit(s) shipping from 02. januar 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 2 - 8 | Kr. 49,995 | Kr. 99,99 |
| 10 - 18 | Kr. 47,475 | Kr. 94,95 |
| 20 - 48 | Kr. 45,59 | Kr. 91,18 |
| 50 - 98 | Kr. 43,53 | Kr. 87,06 |
| 100 + | Kr. 35,005 | Kr. 70,01 |
*price indicative
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 16.51mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110GPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRLB4030PBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-220AB IRF1404ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V D2PAK IRLS4030TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRFS4010TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP4110PBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRFB3207PBF