Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.785 35 

(exc. VAT)

Kr.981 70 

(inc. VAT)

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  • 450 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 15,707Kr. 785,35
100 - 200Kr. 13,641Kr. 682,05
250 +Kr. 13,30Kr. 665,00

*price indicative

RS Stock No.:
124-9026
Mfr. Part No.:
IRLB4030PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

87nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

370W

Maximum Operating Temperature

175°C

Width

4.83 mm

Standards/Approvals

No

Height

9.02mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
MX

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