Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

Kr.82 84 

(exc. VAT)

Kr.103 56 

(inc. VAT)

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  • 66 unit(s) ready to ship
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  • Plus 494 unit(s) shipping from 01. januar 2026
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Units
Per unit
Per Pack*
2 - 18Kr. 41,42Kr. 82,84
20 - 48Kr. 35,18Kr. 70,36
50 - 98Kr. 33,12Kr. 66,24
100 - 198Kr. 30,60Kr. 61,20
200 +Kr. 28,545Kr. 57,09

*price indicative

RS Stock No.:
688-7216
Mfr. Part No.:
IRLB4030PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

87nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

9.02mm

Distrelec Product Id

304-35-447

Automotive Standard

No

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