Infineon HEXFET Type N-Channel MOSFET, 150 A, 20 V Enhancement, 2-Pin DirectFET

View all MOSFETs

Subtotal (1 reel of 4800 units)*

Kr.38 544 00 

(exc. VAT)

Kr.48 192 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4800 +Kr. 8,03Kr. 38 544,00

*price indicative

RS Stock No.:
222-4736
Mfr. Part No.:
IRF6620TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

20V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

89W

Standards/Approvals

No

Length

6.35mm

Width

5.05 mm

Height

0.68mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

Related links