Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

Kr.39 096 00 

(exc. VAT)

Kr.48 868 80 

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +Kr. 8,145Kr. 39 096,00

*price indicative

RS Stock No.:
218-3101
Mfr. Part No.:
IRF6775MTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

56mΩ

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

1.3V

Standards/Approvals

No

Height

0.68mm

Width

3.95 mm

Length

4.85mm

Automotive Standard

No

The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.

Latest MOSFET Silicon technology

Dual sided cooling compatible

Compatible with existing surface mount technologies

Lead-Free

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