Infineon HEXFET N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS Stock No.:
- 218-3101
- Mfr. Part No.:
- IRF6775MTRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
Kr. 42 369,60
(exc. VAT)
Kr. 52 963,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 04 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4800 + | Kr. 8,827 | Kr. 42 369,60 |
*price indicative
- RS Stock No.:
- 218-3101
- Mfr. Part No.:
- IRF6775MTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Width | 3.95mm | |
| Height | 680μm | |
| Standards/Approvals | No | |
| Length | 4.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Width 3.95mm | ||
Height 680μm | ||
Standards/Approvals No | ||
Length 4.85mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
Related links
- Infineon HEXFET N-Channel MOSFET 150 V, 2-Pin DirectFET IRF6775MTRPBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET IRF6620TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
- Infineon HEXFET N-Channel MOSFET 150 V, 7-Pin DirectFET IRF6643TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 15-Pin DirectFET IRF7779L2TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR2705TRPBF