Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

Kr.69 585 60 

(exc. VAT)

Kr.86 980 80 

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +Kr. 14,497Kr. 69 585,60

*price indicative

RS Stock No.:
214-8964
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Width

5.05 mm

Length

6.35mm

Height

0.74mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

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