Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

Kr.62 203 20 

(exc. VAT)

Kr.77 755 20 

(inc. VAT)

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Units
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Per Reel*
4800 +Kr. 12,959Kr. 62 203,20

*price indicative

RS Stock No.:
214-8949
Mfr. Part No.:
AUIRF7675M2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.05 mm

Length

6.35mm

Height

0.74mm

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

Advanced Process Technology

175°C Operating Temperature

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