Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR

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Subtotal (1 pack of 5 units)*

Kr.214 22 

(exc. VAT)

Kr.267 775 

(inc. VAT)

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5 - 20Kr. 42,844Kr. 214,22
25 - 45Kr. 36,86Kr. 184,30
50 - 120Kr. 34,686Kr. 173,43
125 - 245Kr. 32,124Kr. 160,62
250 +Kr. 29,996Kr. 149,98

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Packaging Options:
RS Stock No.:
214-8965
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

0.74mm

Length

6.35mm

Standards/Approvals

No

Width

5.05 mm

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

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