Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF

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Subtotal (1 pack of 10 units)*

Kr.183 82 

(exc. VAT)

Kr.229 78 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 18,382Kr. 183,82
50 - 90Kr. 17,457Kr. 174,57
100 - 240Kr. 16,737Kr. 167,37
250 - 490Kr. 15,993Kr. 159,93
500 +Kr. 14,883Kr. 148,83

*price indicative

Packaging Options:
RS Stock No.:
222-4739
Mfr. Part No.:
IRF6636TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

20V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

6.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Width

3.95 mm

Length

4.85mm

Height

0.68mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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