Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

Kr.51 009 60 

(exc. VAT)

Kr.63 763 20 

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +Kr. 10,627Kr. 51 009,60

*price indicative

RS Stock No.:
222-4738
Mfr. Part No.:
IRF6636TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

6.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Height

0.68mm

Standards/Approvals

No

Length

4.85mm

Width

3.95 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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