Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF

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Subtotal (1 pack of 10 units)*

Kr.109 37 

(exc. VAT)

Kr.136 71 

(inc. VAT)

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10 +Kr. 10,937Kr. 109,37

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Packaging Options:
RS Stock No.:
218-3102
Mfr. Part No.:
IRF6775MTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

150V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

56mΩ

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

25nC

Standards/Approvals

No

Length

4.85mm

Width

3.95 mm

Height

0.68mm

Automotive Standard

No

The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.

Latest MOSFET Silicon technology

Dual sided cooling compatible

Compatible with existing surface mount technologies

Lead-Free

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