Infineon HEXFET Type N-Channel MOSFET, 150 A, 20 V Enhancement, 2-Pin DirectFET IRF6620TRPBF

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Subtotal (1 pack of 10 units)*

Kr.138 92 

(exc. VAT)

Kr.173 65 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 13,892Kr. 138,92
50 - 90Kr. 13,19Kr. 131,90
100 - 240Kr. 11,863Kr. 118,63
250 - 490Kr. 10,674Kr. 106,74
500 +Kr. 10,159Kr. 101,59

*price indicative

Packaging Options:
RS Stock No.:
222-4737
Mfr. Part No.:
IRF6620TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

20V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

20 V

Width

5.05 mm

Length

6.35mm

Height

0.68mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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