STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

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Subtotal (1 reel of 3000 units)*

Kr.69 219 00 

(exc. VAT)

Kr.86 523 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 23,073Kr. 69 219,00

*price indicative

RS Stock No.:
192-4658
Mfr. Part No.:
STL26N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

215mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

8.1mm

Width

8.1 mm

Height

0.9mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

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