Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerFLAT
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	44nC
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	160W
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	8.1mm
	Width	8.1 mm
	Height	0.9mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerFLAT
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 44nC
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 160W
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 8.1mm
	Width 8.1 mm
	Height 0.9mm
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 25 A, 600 V Enhancement, 5-Pin PowerFLAT

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