STMicroelectronics N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 192-4925P
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (20 units, supplied in a tube)*
Kr. 884,30
(exc. VAT)
Kr. 1 105,38
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 46 unit(s) shipping from 25 September 2026
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Units | Per unit |
|---|---|
| 20 - 98 | Kr. 44,215 |
| 100 - 198 | Kr. 39,47 |
| 200 + | Kr. 33,92 |
*price indicative
- RS Stock No.:
- 192-4925P
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 150°C | ||
Width 4.6mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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