Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	24 V
	Package Type	WLCSP
	Mounting Type	Surface Mount
	Pin Count	10
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	1.3V
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Dual
	Maximum Gate Source Voltage	±12 V
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Width	2.13mm
	Length	3.23mm
	Typical Gate Charge @ Vgs	49 nC @ 4.5 V nC
	Height	0.17mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 24 V
	Package Type WLCSP
	Mounting Type Surface Mount
	Pin Count 10
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 1.3V
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Dual
	Maximum Gate Source Voltage ±12 V
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Width 2.13mm
	Length 3.23mm
	Typical Gate Charge @ Vgs 49 nC @ 4.5 V nC
	Height 0.17mm

Datasheet EFC4K110NUZTDG

EFC4K110NUZTDG features a ultra low on−state resistance and high current with small and thin CSP package. It is best suited for 1−2 Cells lithium−ion battery protection circuit.

Low Rss(on)
Small size and narrow width
No latch up phenomenon
Low Gate Charge
2kV ESD HBM
Common Drain Type
ESD Diode-protected Gate
Low power consumption
It can be mounted on narrow width and small area board
High durability when abnormal high voltage input
Ease of drive, faster turn-on
Application
1−2 Cells Lithium−ion Battery Charging and Discharging Switch in battery protection circuit

Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG