onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK

Subtotal (1 reel of 3000 units)*

Kr.10 818 00 

(exc. VAT)

Kr.13 524 00 

(inc. VAT)

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3000 +Kr. 3,606Kr. 10 818,00

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RS Stock No.:
195-2547
Mfr. Part No.:
NVMYS011N04CTWG
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NVMYS011N04C

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

28W

Typical Gate Charge Qg @ Vgs

7.9nC

Maximum Operating Temperature

175°C

Width

4.25 mm

Standards/Approvals

No

Length

5mm

Height

1.15mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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