Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	60V
	Series	NVMYS021N06CL
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	31.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	28W
	Maximum Operating Temperature	175°C
	Height	1.15mm
	Length	5mm
	Standards/Approvals	No
	Width	4.25 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 60V
	Series NVMYS021N06CL
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 31.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 28W
	Maximum Operating Temperature 175°C
	Height 1.15mm
	Length 5mm
	Standards/Approvals No
	Width 4.25 mm
	Automotive Standard AEC-Q101

Datasheet NVMYS021N06CLTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK

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