onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLT1G

View all MOSFETs

Subtotal (1 pack of 30 units)*

Kr.254 97 

(exc. VAT)

Kr.318 72 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 3 000 unit(s), ready to ship
Units
Per unit
Per Pack*
30 +Kr. 8,499Kr. 254,97

*price indicative

Packaging Options:
RS Stock No.:
195-2561
Mfr. Part No.:
NVMFD6H852NLT1G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

175°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Forward Voltage Vf

0.8V

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Width

5.1 mm

Height

1.05mm

Length

6.1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection

PPAP Capable

These Devices are Pb−Free

Related links