onsemi Dual 2 Type N-Channel Power MOSFET, 27 A, 40 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 178-4300
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Subtotal (1 reel of 1500 units)*
Kr.12 810 00
(exc. VAT)
Kr.16 020 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 01. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | Kr. 8,54 | Kr. 12 810,00 |
*price indicative
- RS Stock No.:
- 178-4300
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | 175°C | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.84V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature 175°C | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.84V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Related links
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN