onsemi Dual 2 Type N-Channel Power MOSFET, 27 A, 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.138 20
(exc. VAT)
Kr.172 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 08. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 13,82 | Kr. 138,20 |
| 100 - 240 | Kr. 11,92 | Kr. 119,20 |
| 250 - 490 | Kr. 10,342 | Kr. 103,42 |
| 500 - 990 | Kr. 9,083 | Kr. 90,83 |
| 1000 + | Kr. 8,26 | Kr. 82,60 |
*price indicative
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 23W | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 23W | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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