Vishay SQD10950E Type N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 200-6793
- Mfr. Part No.:
- SQD10950E_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.325 25
(exc. VAT)
Kr.406 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 13,01 | Kr. 325,25 |
| 50 - 100 | Kr. 10,671 | Kr. 266,78 |
| 125 - 225 | Kr. 9,756 | Kr. 243,90 |
| 250 - 600 | Kr. 9,106 | Kr. 227,65 |
| 625 + | Kr. 7,802 | Kr. 195,05 |
*price indicative
- RS Stock No.:
- 200-6793
- Mfr. Part No.:
- SQD10950E_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SQD10950E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 10.41mm | |
| Length | 6.73mm | |
| Width | 2.38 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SQD10950E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 10.41mm | ||
Length 6.73mm | ||
Width 2.38 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
Package with low thermal resistance
100 % Rg and UIS tested
AEC-Q101 qualified
Related links
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 250 V, 3-Pin DPAK SQD10950E_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034EL_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin D2PAK SQM50034EL_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin DPAK FDD5353
- Toshiba TK N-Channel MOSFET 600 VRVQ(S
- onsemi P-Channel MOSFET 200 V, 3-Pin D2PAK FQB12P20TM
