Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8

Subtotal (1 pack of 5 units)*

Kr.352 81 

(exc. VAT)

Kr.441 01 

(inc. VAT)

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Units
Per unit
Per Pack*
5 +Kr. 70,562Kr. 352,81

*price indicative

RS Stock No.:
200-6810
Mfr. Part No.:
SIHH125N60EF-T1GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

156W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

8.1mm

Length

8.1mm

Width

1.05 mm

Automotive Standard

No

The Vishay SIHH125N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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