Vishay Type N-Channel MOSFET & Diode, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Subtotal (1 reel of 2000 units)*

Kr.80 830 00 

(exc. VAT)

Kr.101 038 00 

(inc. VAT)

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  • 2 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
2000 +Kr. 40,415Kr. 80 830,00

*price indicative

RS Stock No.:
252-0263
Mfr. Part No.:
SIHK055N60EF-T1GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.05mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

132W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.15 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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