Vishay EF N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3

RS Stock No.:: 252-0263
Mfr. Part No.:: SIHK055N60EF-T1GE3
Brand:: Vishay

Vishay EF N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3

Subtotal (1 reel of 2000 units)*

Kr. 80 830,00

(exc. VAT)

Kr. 101 038,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2000 +	Kr. 40,415	Kr. 80 830,00

*price indicative

RS Stock No.:: 252-0263
Mfr. Part No.:: SIHK055N60EF-T1GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.05mΩ
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	90nC
	Maximum Power Dissipation Pd	236W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Width	5.15mm
	Standards/Approvals	RoHS
	Length	6.15mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.05mΩ
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 90nC
	Maximum Power Dissipation Pd 236W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Width 5.15mm
	Standards/Approvals RoHS
	Length 6.15mm
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Drain Current - SIHK055N60EF-T1GE3

This power MOSFET is a high-voltage switching transistor intended for demanding power conversion and control environments. It is a surface-mount N-channel depletion device that operates across a broad thermal range and is suited to applications requiring high-voltage handling, substantial continuous current and controlled gate-drive behaviour.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching capability
• 40A continuous drain current supports heavy-load operation
• 0.05mΩ Rds(on) minimises conduction losses at high currents
• 90nC typical gate charge allows predictable switching energy
• 236W maximum power dissipation handles significant thermal stress
• 20V gate tolerance permits robust gate-drive margins

Applications

• Used with industrial power converters and inverters
• Suitable for high-voltage motor drive stages
• Ideal for DC-DC conversion in heavy-duty systems
• Can be used for traction or automotive power modules
• Used for high-power switch arrays in energy systems

What thermal extremes can the device endure in service?

It is rated to operate from -55°C up to +150°C, permitting use in environments with wide temperature variation.

How is the component mounted on a board and what package is provided?

The device is supplied in a PowerPAK 10x12 surface-mount package designed for low-inductance PCB mounting and efficient thermal contact.

What regulatory or industry readiness does it offer for automotive use?

It meets AEC-Q101 requirements for semiconductor qualification suitable for automotive electronic systems.

What pin-count should designers expect when creating PCB footprints?

The component presents an 8-pin layout, which should be accommodated in the PCB land pattern for correct placement and routing.