Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

RS Stock No.:: 252-0263
Mfr. Part No.:: SIHK055N60EF-T1GE3
Brand:: Vishay

Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Subtotal (1 reel of 2000 units)*

Kr. 80 830,00

(exc. VAT)

Kr. 101 038,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 2 000 unit(s) shipping from 22 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	Kr. 40,415	Kr. 80 830,00

*price indicative

RS Stock No.:: 252-0263
Mfr. Part No.:: SIHK055N60EF-T1GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.05mΩ
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	90nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	236W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Width	5.15mm
	Length	6.15mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.05mΩ
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 90nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 236W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Width 5.15mm
	Length 6.15mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Maximum Continuous Drain Current - SIHK055N60EF-T1GE3

This power MOSFET is a high-voltage, N‑channel device designed for demanding power-conversion and automotive applications. It operates across a wide temperature range and is intended for surface-mount deployment where robust switching, high voltage tolerance and automotive qualification are required.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 40A continuous current supports substantial load currents • 0.05mΩ Rds(on) minimises conduction losses during operation • 236W power dissipation allows high thermal throughput • 90nC typical gate charge reduces switching energy per transition • AEC-Q101 qualification meets automotive stress and reliability needs

Applications

• Suitable for traction inverter stages in automotive electronics • Ideal for high-voltage DC-DC converters in industrial automation • Used for switch-mode power supplies in power distribution systems • Can be used for motor-drive stages requiring high current capacity • Suitable for Compact surface-mounted power modules

What gate-drive considerations are required for efficient switching?

Drive circuits should accommodate up to ±20V gate excursion and supply sufficient Peak current to charge the 90nC gate to the chosen Vgs for the defined switching speed while managing switching losses.

How does thermal management affect continuous operation?

To sustain the 236W dissipation, thermal pathways such as large copper planes or heatsinking to the PowerPAK substrate are necessary to keep junction temperatures within the specified +150°C limit.

What mounting and layout practices improve performance?

Use low-inductance surface-mount layouts with short, wide tracks for drain and source, and place gate resistors and decoupling close to the pins to reduce ringing and electromagnetic interference.

What environmental range can be expected for field use?

The device is specified for operation from -55°C up to +150°C, supporting a broad span of ambient and elevated junction conditions in industrial and automotive environments.