Vishay EF N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

Subtotal (1 reel of 2000 units)*

Kr. 70 068,00

(exc. VAT)

Kr. 87 584,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 35,034Kr. 70 068,00

*price indicative

RS Stock No.:
252-0265
Mfr. Part No.:
SIHK075N60EF-T1GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.061Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

72nC

Maximum Operating Temperature

+150°C

Width

5.15mm

Length

6.15mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)


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