STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247

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Subtotal 5 units (supplied in a tube)*

Kr.756 20 

(exc. VAT)

Kr.945 25 

(inc. VAT)

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Units
Per unit
5 - 9Kr. 151,24
10 - 24Kr. 147,35
25 - 49Kr. 143,57
50 +Kr. 140,03

*price indicative

Packaging Options:
RS Stock No.:
201-0860P
Mfr. Part No.:
SCTW35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW35

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Height

15.75mm

Standards/Approvals

No

Length

14.8mm

Width

5.15 mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitance