STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247
- RS Stock No.:
- 202-5491
- Mfr. Part No.:
- SCTWA20N120
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
Kr. 4 147,11
(exc. VAT)
Kr. 5 183,88
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | Kr. 138,237 | Kr. 4 147,11 |
*price indicative
- RS Stock No.:
- 202-5491
- Mfr. Part No.:
- SCTWA20N120
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.189Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 200°C | |
| Height | 41.37mm | |
| Length | 16.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.189Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 200°C | ||
Height 41.37mm | ||
Length 16.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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