STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

Kr.35 849 00 

(exc. VAT)

Kr.44 811 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +Kr. 35,849Kr. 35 849,00

*price indicative

RS Stock No.:
202-5495
Mfr. Part No.:
STB33N60DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

ST

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Depletion

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

190W

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

15.85mm

Standards/Approvals

No

Length

10.4mm

Width

4.6 mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

Extremely high dv/dt ruggedness

Zener-protected

Related links