STMicroelectronics ST N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263

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Subtotal 20 units (supplied on a continuous strip)*

Kr. 1 106,20

(exc. VAT)

Kr. 1 382,80

(inc. VAT)

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  • 996 unit(s) ready to ship
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Units
Per unit
20 - 48Kr. 55,31
50 +Kr. 45,30

*price indicative

Packaging Options:
RS Stock No.:
202-5496P
Mfr. Part No.:
STB33N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

ST

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

190W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6mm

Standards/Approvals

No

Length

10.4mm

Height

15.85mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

Extremely high dv/dt ruggedness

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