STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247
- RS Stock No.:
- 202-5547P
- Mfr. Part No.:
- STW70N65DM6
- Brand:
- STMicroelectronics
Subtotal 1 unit (supplied in a tube)*
Kr. 137,83
(exc. VAT)
Kr. 172,29
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 433 unit(s) shipping from 27 July 2026
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Units | Per unit |
|---|---|
| 1 + | Kr. 137,83 |
*price indicative
- RS Stock No.:
- 202-5547P
- Mfr. Part No.:
- STW70N65DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 450W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 450W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 41.2mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
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