STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247

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Subtotal 5 units (supplied in a tube)*

Kr.742 45 

(exc. VAT)

Kr.928 05 

(inc. VAT)

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  • Plus 1 unit(s) shipping from 26. januar 2026
  • Plus 600 unit(s) shipping from 06. mai 2026
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Units
Per unit
5 - 9Kr. 148,49
10 +Kr. 139,11

*price indicative

Packaging Options:
RS Stock No.:
202-5549P
Mfr. Part No.:
STW70N65DM6-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

650V

Series

ST

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

450W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

125nC

Maximum Operating Temperature

150°C

Length

15.9mm

Standards/Approvals

No

Height

41.2mm

Width

5.1 mm

Automotive Standard

No

The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

100% avalanche tested

Zener-protected