onsemi NTB Type N-Channel MOSFET, 201 A, 100 V Enhancement, 3-Pin TO-263 NTB004N10G
- RS Stock No.:
- 202-5688
- Mfr. Part No.:
- NTB004N10G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.335 65
(exc. VAT)
Kr.419 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 245 unit(s) shipping from 09. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 67,13 | Kr. 335,65 |
| 50 - 95 | Kr. 57,886 | Kr. 289,43 |
| 100 + | Kr. 50,152 | Kr. 250,76 |
*price indicative
- RS Stock No.:
- 202-5688
- Mfr. Part No.:
- NTB004N10G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.88mm | |
| Width | 4.83 mm | |
| Standards/Approvals | Pb-Free and are RoHS | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.82mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.88mm | ||
Width 4.83 mm | ||
Standards/Approvals Pb-Free and are RoHS | ||
Length 10.63mm | ||
Automotive Standard No | ||
The ON Semiconductor Power MOSFET runs with 201 Ampere and 100 Volts. It can be used in Hot Swap in 48 V systems.
Low drain to source on resistance
High current capability
Wide safe operating area
Pb free
Halogen free
RoHS compliant
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