onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC

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Subtotal (1 pack of 10 units)*

Kr.106 70 

(exc. VAT)

Kr.133 40 

(inc. VAT)

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10 +Kr. 10,67Kr. 106,70

*price indicative

Packaging Options:
RS Stock No.:
205-2496
Mfr. Part No.:
NTBS9D0N10MC
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

NTB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

9.6 mm

Length

14.6mm

Height

4.6mm

Automotive Standard

No

The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 60A

Drain to source on resistance rating is 9.0mohm

Low RDS(on) to minimize conduction losses

Optimized switching performance

Low QG and capacitance to minimize driver losses

Industry’s lowest Qrr and softest body-diode for superior low noise switching

Lowers switching noise/EMI

High efficiency with lower switching spike and EMI

Package type is D2PAK3

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