onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1

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Subtotal (1 pack of 5 units)*

Kr.349 79 

(exc. VAT)

Kr.437 24 

(inc. VAT)

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5 +Kr. 69,958Kr. 349,79

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Packaging Options:
RS Stock No.:
205-2494
Mfr. Part No.:
NTBG160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

19.5A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33.8nC

Maximum Power Dissipation Pd

136W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.9V

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, RoHS

Height

4.3mm

Width

9.7 mm

Length

15.1mm

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 19.5A

Drain to source on resistance rating is 224mohm

Ultra Low Gate Charge

High Speed Switching and Low Capacitance

100% Avalanche Tested

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